Studying the effect of Cu microstructure on electromigration reliability using statistical simulation
Electromigration (EM) describes the mass transport in a metal driven by the momentum transfer from electron scattering with metal ions. This can develop into a degradation process due to void growth for on-chip interconnects when subjected to high electric current densities and eventual interconnec...
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Format: | Others |
Language: | English |
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2012
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Online Access: | http://hdl.handle.net/2152/ETD-UT-2011-12-4384 |