Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair
The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the on-chip interconnects was impeded by the plasma induced damage during etching and photoresist stripping processes. This dissertation aims to stu...
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| Format: | Others |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/2152/ETD-UT-2012-08-5981 |