Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs
During the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based HEMTs fabrication result in a material with better quality and devices with better performance, which makes...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2018
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ |