Enhanced defect generation in gate oxides of P-channel MOS transistors in the presence of water
Hydrogenous species play a key role in radiation induced charge buildup in metal oxide semiconductor field effect transistors (MOSFETs). The effects of water on defect formation in MOSFETs before and after radiation exposure have been studied. Transistors built in Sandia National Laboratories'...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
VANDERBILT
2009
|
| Subjects: | |
| Online Access: | http://etd.library.vanderbilt.edu/available/etd-02062009-162823/ |