IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2015
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ |