Electronic properties and reliability of the silicon dioxide / silicon carbide interface
Silicon carbide has been preferred over other wide band-gap semiconductors for high power applications because of its unique ability to grow a thermal oxide, challenges lie in the quality of the dielectric and of the SiO2/SiC interface. This thesis focuses on the electrical properties and the reliab...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2008
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-04062008-235422/ |