Reliability Issues in Germanium and Silicon Carbide MOS Devices
The small band-gap and the non-ideal high-k germanium interface makes Ge p-MOSFETs susceptible to various reliability issues. Similarly, the non-ideal SiO2-SiC interface in SiC MOS capacitors makes them susceptible to radiation damage. In this work radiation and bias temperature stress response of M...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2009
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-06172009-164817/ |