Effects of Proton-Induced Displacement Damage on Gallium Nitrided Power Amplifier RF Performance
High frequency RF and microwave communications systems for military, space, and telecommunications applications require efficient power amplifiers with high power density. Gallium nitride high electron mobility transistors (GaN HEMTs) are a top contender for use in these applications due to the supe...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
VANDERBILT
2015
|
| Subjects: | |
| Online Access: | http://etd.library.vanderbilt.edu/available/etd-06252015-131135/ |