CHARGE COLLECTION MECHANISMS IN AlGaN/GaN MOS HIGH ELECTRON MOBILITY TRANSISTORS
Single-event effects (SEEs) in microelectronic devices present a serious reliability concern for space-based applications, where electronic components are exposed to highly energetic ionizing radiation. Single-event effects can be better understood and predicted by investigating the underlying charg...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2014
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07292014-091850/ |