Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing
Hydrogen produces variability in the radiation response of integrated circuits, whether incorporated in the oxide or present as a gas. The presence of molecular hydrogen can increase interface trap buildup and alter dose rate response. Defects with hydrogen incorporated in the oxide during processin...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2012
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ |