Resonant Gate Drive Techniques for Power MOSFETs

With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circu...

Full description

Bibliographic Details
Main Author: Chen, Yuhui
Other Authors: Electrical and Computer Engineering
Format: Others
Published: Virginia Tech 2011
Subjects:
Online Access:http://hdl.handle.net/10919/10099
http://scholar.lib.vt.edu/theses/available/etd-06272000-14570054