Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes

Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes

Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requ...

Full description

Bibliographic Details
Main Author: Allen, Noah P.
Other Authors: Electrical Engineering
Format: Others
Published: Virginia Tech 2021
Subjects:
allium nitride (GaN)
Schottky Diode
wide bandgap semiconductor
power electronic device
barrier inhomogeneity
IVT
CVT
DLTS
SSPC
DLOS
Online Access:http://hdl.handle.net/10919/102924

Internet

http://hdl.handle.net/10919/102924

Similar Items