Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
Emerging memory technologies are being intensively investigated for extending Moore\'s law in the next decade. The conductive bridge random access memory (CBRAM) is one of the most promising candidates. CBRAM shows unique nanoionics-based filamentary switching mechanism. Compared to flash memor...
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Virginia Tech
2013
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| Online Access: | http://hdl.handle.net/10919/23141 |