High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure
The work reported in this dissertation is intended to propose, analyze and demonstrate a technology for a high temperature integrated power electronics module, for high temperature (e.g those over 200oC) applications involving high density and low stress. To achieve this goal, this study has examin...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
Virginia Tech
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10919/30076 http://scholar.lib.vt.edu/theses/available/etd-12132005-165616/ |