High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure
The work reported in this dissertation is intended to propose, analyze and demonstrate a technology for a high temperature integrated power electronics module, for high temperature (e.g those over 200oC) applications involving high density and low stress. To achieve this goal, this study has examin...
Main Author: | yin, jian |
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Other Authors: | Electrical and Computer Engineering |
Format: | Others |
Published: |
Virginia Tech
2014
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Subjects: | |
Online Access: | http://hdl.handle.net/10919/30076 http://scholar.lib.vt.edu/theses/available/etd-12132005-165616/ |
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