Electrical properites of doped and undoped PZT thin films prepared by a sol-gel method
Fatigue and electrical degradation including low voltage breakdown of ferroelectric lead zirconate titanate Pb(Zr<sub>x</sub>Ti₁)O₃ (i.e. PZT) thin films are the major limitations for commercial memory applications of these films. It is noted that the presence of oxygen vacancies and the...
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| Format: | Others |
| Language: | en |
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/44013 http://scholar.lib.vt.edu/theses/available/etd-07292009-090550/ |