Characterization and Failure Mode Analysis of Cascode GaN HEMT

Characterization and Failure Mode Analysis of Cascode GaN HEMT

Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si)...

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Bibliographic Details
Main Author: Liu, Zhengyang
Other Authors: Electrical and Computer Engineering
Format: Others
Published: Virginia Tech 2014
Subjects:
cascode GaN
simulation model
loss analysis
soft switching
stack-die package
Online Access:http://hdl.handle.net/10919/49580

Internet

http://hdl.handle.net/10919/49580

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