Electrical analysis of low energy argon ion bombarded GaAs
An electrical analysis was done on A1 and Au Schottky diodes fabricated on n-type (100) GaAs which had been bombarded with low energy Ar ions. The purpose of this study was to quantify electrically damage caused by the Ion Beam Etching (IBE) as functions of energy and fluence. Electrical studies i...
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| Format: | Others |
| Language: | en_US |
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Virginia Polytechnic Institute and State University
2015
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| Online Access: | http://hdl.handle.net/10919/53676 |