The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS
This work has analyzed the complex interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has been shown that the MOCVD samples have a very s...
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| Format: | Others |
| Language: | en_US |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/76913 http://scholar.lib.vt.edu/theses/available/etd-12152010-184526/ |