Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high switc...
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| Format: | Others |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/77593 |