Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications

Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications

The aggressive scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistor over the past 50 years has resulted in an exponential increase in device density, which consequentially has increased computation power rapidly. This has pronounced the necessity to scale the devic...

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Bibliographic Details
Main Author: Saluru, Sarat K.
Other Authors: Electrical and Computer Engineering
Format: Others
Published: Virginia Tech 2017
Subjects:
InGaAs
III-V
Metal-Oxide-Semiconductor Field-Effect Transistors
Fin-Field-Effect Transistors
Heterogeneous Integration
Silicon
Online Access:http://hdl.handle.net/10919/78028

Internet

http://hdl.handle.net/10919/78028

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