Electronic Transport in Highly Mismatched InAs Films on GaAs
Electrical properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) In...
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| Format: | Others |
| Language: | en_US |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/78064 http://scholar.lib.vt.edu/theses/available/etd-12172013-155644/ |