High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated i...

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Bibliographic Details
Main Author: DiMarino, Christina Marie
Other Authors: Electrical and Computer Engineering
Format: Others
Language:en_US
Published: Virginia Tech 2017
Subjects:
power semiconductor devices
SiC MOSFET
SiC BJT
SiC JFET
high temperature
characterization
silicon carbide
Online Access:http://hdl.handle.net/10919/78116
http://scholar.lib.vt.edu/theses/available/etd-05142014-131824/

Internet

http://hdl.handle.net/10919/78116
http://scholar.lib.vt.edu/theses/available/etd-05142014-131824/

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