Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
In an effort to lower interconnect time delays and power dissipation in highly integrated logic and memory nanoelectronic products, numerous changes in the materials and processes utilized to fabricate the interconnect have been made in the past decade. Chief among these changes has been the replace...
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| Format: | Others |
| Language: | en_US |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/78172 http://scholar.lib.vt.edu/theses/available/etd-10282016-154542/ |