Resistive Switching in Porous Low-k Dielectrics
Integrating nanometer-sized pores into low-k ILD films is one of the approaches to lower the RC signal delay and thus help sustain the continued scaling of microelectronic devices. While increasing porosity of porous dielectrics lowers the dielectric constant (k), it also creates many reliability an...
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Virginia Tech
2018
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| Online Access: | http://hdl.handle.net/10919/83462 |