Packaging and Magnetic Integration for Reliable Switching of Paralleled SiC MOSFETs
Silicon carbide (SiC) outperform Si chips in terms of high blocking voltage capability, low on-resistance, high-temperature operation, and high switching frequency. Several SiC MOSFETs are usually paralleled to increase current capability, considering cost effectiveness and manufacturability. For a...
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| Format: | Others |
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Virginia Tech
2018
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| Online Access: | http://hdl.handle.net/10919/84497 |