Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters

The emergence of silicon-carbide (SiC) devices has been a 'game changer' in the field of power electronics. With desirable material properties such as low-loss characteristics, high blocking voltage, and high junction temperature operation, they are expected to drastically increase the pow...

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Bibliographic Details
Main Author: Ohn, Sungjae
Other Authors: Electrical Engineering
Format: Others
Published: Virginia Tech 2019
Subjects:
Online Access:http://hdl.handle.net/10919/89550