CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES FORMED BY ION IMPLANTATION OF OXYGEN (SILICON, DEFECTS, INSULATOR).
Silicon-on-insulator (SOI) structures formed in the top region of silicon wafers by ion implantation of oxygen were characterized by RBS (Rutherford Backscattering Spectrometry), OPM (Optical Microscopy), SEM (Scanning Electron Microscopy), and TEM (Transmission Electron Microscopy). Specimens taken...
| Main Author: | |
|---|---|
| Other Authors: | |
| Language: | en |
| Published: |
The University of Arizona.
1986
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10150/183849 |