Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities.
Nonlinear optical properties of passive and active semiconductors are investigated experimentally and theoretically. Improvement of switching cycle time in optical nonlinear etalons to 40 ps is demonstrated, and strained-layer InGaAs/GaAs quantum well material is used in an asymmetric etalon to grea...
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| Language: | en |
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The University of Arizona.
1993
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| Online Access: | http://hdl.handle.net/10150/186295 |