Gas Phase Etching of Silicon Dioxide Films
The gas phase etching of thermal silicon dioxide films was investigated with in situ Fourier Transformed Infrared Spectroscopy (FTIR) and ex situ X-ray Photoelectron Spectroscopy (XPS). The initiation process, the bulk etching of the oxide, and the termination mechanism were characterized as a funct...
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| Language: | EN |
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The University of Arizona.
2006
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| Online Access: | http://hdl.handle.net/10150/194104 |