Surface Pretreatment for Thin Film Surface Reactivity
The formation of a self-limiting interface layer for the integration of high-k dielectric materials into silicon based transistor devices was investigated. Chlorine atoms were used to activate a liquid cleaned Si(100) surface for the reaction with H₂O(g). A saturation coverage of 0.8 monolayers of c...
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| Language: | EN |
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The University of Arizona.
2006
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| Online Access: | http://hdl.handle.net/10150/194965 |