Control of Plasma Etching of Semiconductor Surfaces
The current semiconductor device manufacturing requires more strict control of plasma etching. In this research, plasma etching was investigated through gas phase characterization and interface reactions. Hydrogen and nitrogen were added to Ar plasmas to manipulate the electro-physical properties th...
| Main Author: | |
|---|---|
| Other Authors: | |
| Language: | EN |
| Published: |
The University of Arizona.
2005
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10150/195314 |