Hafnium Oxide Films for Application as Gate Dielectric
The deposition and characterization of HfO2 films for potential application as a high-k gate dielectric in MOS devices has been investigated. DC magnetron reactive sputtering was utilized to prepare the HfO2 films. Structural, chemical, and electrical analyses were performed to characterize the var...
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| Language: | EN |
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The University of Arizona.
2005
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| Online Access: | http://hdl.handle.net/10150/196101 |