Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces
Ultra low-k dielectric films are expected to widely replace SiO2 as the interlayer dielectric for the next-generation microelectronic devices. A challenge facing the integration of these dielectrics in manufacturing is their interactions with gaseous contaminants, such as moisture and isopropanol,...
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| Language: | EN |
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The University of Arizona.
2007
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| Online Access: | http://hdl.handle.net/10150/196143 |