Two-dimensional simulation of power MOSFET near breakdown
A simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche...
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| Language: | en_US |
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The University of Arizona.
1988
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| Online Access: | http://hdl.handle.net/10150/276695 |