Simulation of radiation-induced parametric degradation in electronic amplifiers
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is...
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| Language: | en_US |
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The University of Arizona.
1989
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| Online Access: | http://hdl.handle.net/10150/277143 |