STRIATIONS, SWIRLS, AND STACKING FAULTS IN CZOCHRALSKI-GROWN SILICON
In this investigation, controlled thermal annealing and oxidation treatments were carried out on wafers obtained from seed-end and tang-end regions of (100)-oriented, 75 mm-diameter, Czochralski-grown, "typical" silicon single crystals. The radial variation of resistivity was characterized...
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| Language: | en_US |
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The University of Arizona.
1981
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| Online Access: | http://hdl.handle.net/10150/281940 |