Liquid-Phase Etching and Chemical Passivation of III-V Semiconductors
The development of metal-oxide-semiconductor field effect transistor (MOSFET) technology relies on new channel materials with higher carrier mobilities that allow faster switching but at lower voltages. III-V semiconductors are suitable for channel materials in n-type MOSFETs due to their higher ele...
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| Language: | en_US |
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The University of Arizona.
2016
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| Online Access: | http://hdl.handle.net/10150/612461 http://arizona.openrepository.com/arizona/handle/10150/612461 |