Perpendicular magnetic tunnel junction with W seed and capping layers

Perpendicular magnetic tunnel junction with W seed and capping layers

We present a study on perpendicular magnetic tunnel junctions with W as buffer and capping layers. A tunneling magnetoresistance of 138% and an interfacial magnetic anisotropy of 1.67 erg/cm(2) were obtained in optimally annealed samples. However, after extended annealing at 420 degrees C, junctions...

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Bibliographic Details
Main Authors: Almasi, H., Sun, C. L., Li, X., Newhouse-Illige, T., Bi, C., Price, K. C., Nahar, S., Grezes, C., Hu, Q., Khalili Amiri, P., Wang, K. L., Voyles, P. M., Wang, W. G.
Other Authors: Univ Arizona, Dept Phys
Language:en
Published: AMER INST PHYSICS 2017
Subjects:
Magnetic tunnel junctions
Tantalum
Tunneling
Magnetic annealing
Magnetic anisotropy
Online Access:http://hdl.handle.net/10150/624048
http://arizona.openrepository.com/arizona/handle/10150/624048

Internet

http://hdl.handle.net/10150/624048
http://arizona.openrepository.com/arizona/handle/10150/624048

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