Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase
III-V semiconductors have higher charge carrier mobilities than silicon and are used in photovoltaic devices, optical sensors, and emitters. The high injection velocities obtained with III-V channels allow for faster transistors with low power consumption. However, the large-scale implementation in...
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| Language: | en_US |
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The University of Arizona.
2017
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| Online Access: | http://hdl.handle.net/10150/626327 http://arizona.openrepository.com/arizona/handle/10150/626327 |