Optical Characterization of III Nitride Semiconductors Using Cathodoluminescence Techniques
abstract: Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium nitride in the active layer. However, the device efficiency i...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/2286/R.I.14314 |