Electron transport properties in one-dimensional III-V nanowire transistors

abstract: Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these m...

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Bibliographic Details
Other Authors: Liang, Hanshuang (Author)
Format: Dissertation
Language:English
Published: 2011
Subjects:
FET
Online Access:http://hdl.handle.net/2286/R.I.14423