GaN HEMT Modeling and Design for Millimeter and Sub-millimeter Wave Power Amplifiers through Monte Carlo Particle-based Device Simulations

GaN HEMT Modeling and Design for Millimeter and Sub-millimeter Wave Power Amplifiers through Monte Carlo Particle-based Device Simulations

abstract: The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dy...

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Bibliographic Details
Other Authors: Guerra, Diego (Author)
Format: Doctoral Thesis
Language:English
Published: 2011
Subjects:
Electrical engineering
GaN HEMT
Harmonic Balance
Large signal
Monte Carlo
Power Amplifier
Simulations
Online Access:http://hdl.handle.net/2286/R.I.14440

Internet

http://hdl.handle.net/2286/R.I.14440

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