GaN HEMT Modeling and Design for Millimeter and Sub-millimeter Wave Power Amplifiers through Monte Carlo Particle-based Device Simulations
abstract: The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dy...
Other Authors: | Guerra, Diego (Author) |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
2011
|
Subjects: | |
Online Access: | http://hdl.handle.net/2286/R.I.14440 |
Similar Items
-
5 Watt GaN HEMT Power Amplifier for LTE
by: K. Niotaki, et al.
Published: (2014-04-01) -
Particle-Based Modeling of Reliability for Millimeter-Wave GaN Devices for Power Amplifier Applications
Published: (2018) -
GaN HEMT and MMIC Design and Evaluation
by: Aroshvili, Giorgi
Published: (2008) -
X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit
by: Kyung-Tae Bae, et al.
Published: (2017-11-01) -
Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers
by: M. Bakowski, et al.
Published: (2018-07-01)