Electronic States of High-k Oxides in Gate Stack Structures
abstract: In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and Zn...
| Other Authors: | |
|---|---|
| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2286/R.I.15179 |