Compact Modeling of Multi-Gate Transistors
abstract: Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2012
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| Online Access: | http://hdl.handle.net/2286/R.I.15862 |