TEM Characterization of Electrically Stressed High Electron Mobility Transistors

TEM Characterization of Electrically Stressed High Electron Mobility Transistors

abstract: High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The disserta...

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Bibliographic Details
Other Authors: Johnson, Michael Ray (Author)
Format: Doctoral Thesis
Language:English
Published: 2012
Subjects:
Physics
Materials Science
GaN
HEMT
TEM
Online Access:http://hdl.handle.net/2286/R.I.16023

Internet

http://hdl.handle.net/2286/R.I.16023

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