Modeling Reliability of Gallium Nitride High Electron Mobility Transistors

Modeling Reliability of Gallium Nitride High Electron Mobility Transistors

abstract: This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied g...

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Bibliographic Details
Other Authors: Padmanabhan, Balaji (Author)
Format: Doctoral Thesis
Language:English
Published: 2013
Subjects:
Electrical engineering
electromechanical coupling
Gallium Nitride
HEMT
Monte Carlo
piezoelectric polarization
self-heating
Online Access:http://hdl.handle.net/2286/R.I.17732

Internet

http://hdl.handle.net/2286/R.I.17732

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