Modeling Reliability of Gallium Nitride High Electron Mobility Transistors
abstract: This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied g...
Other Authors: | Padmanabhan, Balaji (Author) |
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Format: | Doctoral Thesis |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | http://hdl.handle.net/2286/R.I.17732 |
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