Electromigration in Gold Interconnects

Electromigration in Gold Interconnects

abstract: Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium ar...

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Bibliographic Details
Other Authors: Kilgore, Stephen (Author)
Format: Doctoral Thesis
Language:English
Published: 2013
Subjects:
Materials Science
Electrical engineering
Electromigration
GaAs devices
Gold
Integrated Circuits
Interconnects
Reliability
Online Access:http://hdl.handle.net/2286/R.I.20914

Internet

http://hdl.handle.net/2286/R.I.20914

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